Method of depositing tungsten nitride using a source gas comprising silicon
US5691235A · kind A · utility
88Cited by
16References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 12, 1996 |
| Grant date | Nov 25, 1997 |
| Priority date | — |
| Expiry date | Jun 12, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/692
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for depositing tungsten nitride uses a source gas mixture having a silicon based gas, such as silane for depositing the tungsten nitride to overlie a deposition substrate. A non-planar storage capacitor has a tungsten nitride capacitor electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.