Technique for reconfiguring a high density memory
US5691945A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 1, 1996 |
| Grant date | Nov 25, 1997 |
| Priority date | — |
| Expiry date | Mar 1, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C8/12
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A flexible technique for improving yield of manufacturing of high density of memory devices, such as flash EEPROM, involves reconfiguring an integrated circuit memory array having a plurality of sectors selected by an address decoder in response to an N bit field in an address. If defective sectors are detected in the array, it is partitioned to disable defective sectors by configuring a sector decoder to prevent access to the defective sectors while maintaining sequential addressing remaining sectors in the array. The step of partitioning includes configuring the sector decoder to replace a defective sector in one half of the array by another sector in the other half of the array having N-m of the N address bits in common with the defective sector when m is between 1 and N-1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.