Ray-Lin Wan
49Patents
24h-index
38Co-inventors
77Inventor score
Filing activity: May 15, 1992 → Jul 27, 2000
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5526307A | Flash EPROM integrated circuit architecture | Electricity | 246 | Expired |
| US5754469A | Page mode floating gate memory device storing multiple bits per cell | Physics | 198 | Expired |
| US5751637A | Automatic programming algorithm for page mode flash memory with variable programming pulse height and pulse width | Physics | 182 | Expired |
| US5805501A | Flash memory device with multiple checkpoint erase suspend logic | Physics | 102 | Expired |
| US5778440A | Floating gate memory device and method for terminating a program load cycle upon detecting a predetermined address/data pattern | Electricity | 87 | Expired |
| US5745410A | Method and system for soft programming algorithm | Physics | 80 | Expired |
| US5835414A | Page mode program, program verify, read and erase verify for floating gate memory device with low current page buffer | Physics | 68 | Expired |
| US5539688A | Fast pre-programming circuit for floating gate memory | Physics | 65 | Expired |
| US5691945A | Technique for reconfiguring a high density memory | Physics | 64 | Expired |
| US5615153A | Fast flash EPROM programming and pre-programming circuit design | Physics | 64 | Expired |
| US5563823A | Fast FLASH EPROM programming and pre-programming circuit design | Physics | 56 | Expired |
| US6219290A | Memory cell sense amplifier | Physics | 55 | Expired |
| US5963476A | Fowler-Nordheim (F-N) tunneling for pre-programming in a floating gate memory device | Electricity | 52 | Expired |
| US6496417B1 | Method and integrated circuit for bit line soft programming (BLISP) | Physics | 49 | Expired |
| US5414664A | Flash EPROM with block erase flags for over-erase protection | Physics | 48 | Expired |
| US5748535A | Advanced program verify for page mode flash memory | Physics | 41 | Expired |
| US5596530A | Flash EPROM with block erase flags for over-erase protection | Physics | 39 | Expired |
| US5627838A | Automatic test circuitry with non-volatile status write | Physics | 31 | Expired |
| US5280203A | Look-ahead asynchronous register set/reset in programmable logic device | Electricity | 31 | Expired |
| US6147910A | Parallel read and verify for floating gate memory device | Physics | 28 | Expired |
| US6100557A | Triple well charge pump | Electricity | 27 | Expired |
| US5699298A | Flash memory erase with controlled band-to-band tunneling current | Physics | 27 | Expired |
| US5818848A | Automatic test circuitry with non-volatile status write | Physics | 26 | Expired |
| US5818764A | Block-level wordline enablement to reduce negative wordline stress | Physics | 26 | Expired |
| US6178132A | Non-volatile integrated circuit having read while write capability using one address register | Physics | 23 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.