MESFET having a termination layer in the channel layer
US5693969A · kind A · utility
3Cited by
2References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 6, 1995 |
| Grant date | Dec 2, 1997 |
| Priority date | — |
| Expiry date | Mar 6, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/161
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A lateral MESFET (10,20) utilizes a drain (17) and a source (18) damage termination layer to improve the breakdown voltage of the MESFET (10,20). The source (18) and drain (17) damage termination layers are very shallow to prevent interfering with lateral current flow in the channel layer (12). The source (18) and drain (17) damage termination layers are formed by implanting large inert ions using high implant doses and low implantation energies.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.