DRAM no capacitor dielectric process
US5696036A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 15, 1996 |
| Grant date | Dec 9, 1997 |
| Priority date | — |
| Expiry date | Nov 15, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/68
Abstract
A new method of fabricating the NO capacitor dielectric layers of dynamic random access memory (DRAM) cells is disclosed. Because NH.sub.4 Cl particles are soluble (dissolvable) in deionized (DI) water, the undesired NH.sub.4 Cl particles left in the thin nitride surface of the DRAM capacitor dielectric layer can be removed by high-speed spinning the silicon wafers while spraying DI water. At the same time, this high-speed spinning step produces a charge-up effect that can also help the thin nitride layer of the DRAM capacitors eliminate these defects. High quality capacitors are then achieved, and therefore high quality DRAM cells may also be produced using this method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.