Wen-Doe Su
13Patents
7h-index
15Co-inventors
63Inventor score
Filing activity: Aug 17, 1990 → Feb 4, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5208472A | Double spacer salicide MOS device and method | Emerging Cross-Sectional Technologies | 56 | Expired |
| US5223448A | Method for producing a layered capacitor structure for a dynamic random access memory device | Electricity | 51 | Expired |
| US5132241A | Method of manufacturing minimum counterdoping in twin well process | Emerging Cross-Sectional Technologies | 26 | Expired |
| US5156993A | Fabricating a memory cell with an improved capacitor | Electricity | 24 | Expired |
| US5696036A | DRAM no capacitor dielectric process | Electricity | 13 | Expired |
| US6365455B1 | Flash memory process using polysilicon spacers | Electricity | 10 | Expired |
| US5869406A | Method for forming insulating layers between polysilicon layers | Emerging Cross-Sectional Technologies | 8 | Expired |
| US5323037A | Layered capacitor structure for a dynamic random access memory device | Electricity | 6 | Expired |
| US5747357A | Modified poly-buffered isolation | Electricity | 6 | Expired |
| US9560753B2 | Light emitting diode load board and manufacturing process thereof | Electricity | 3 | Active |
| US5883015A | Method for using oxygen plasma treatment on a dielectric layer | Electricity | 1 | Expired |
| US5977608A | Modified poly-buffered isolation | Electricity | 0 | Expired |
| US6204547A | Modified poly-buffered isolation | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.