Capacitor having a metal-oxide dielectric

US5696394A · kind A · utility

Assignee

• Motorola, Inc. · US

Inventors

• Robert E. Jones · Austin, US
• Papu D. Maniar · Austin, US
• Andrew C. Campbell · Austin, US
• Reza Moazzami · Austin, US

Key dates

• Filing date: Jun 14, 1996
• Grant date: Dec 9, 1997
• Expiry date: Jun 14, 2016

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/682

Abstract

A capacitor with a metal-oxide dielectric layer is formed with an upper electrode layer that is electrically connected to an underlying circuit element. The capacitor may be used in forming storage capacitors for DRAM and NVRAM cells. After forming an underlying circuit element, such as a source/drain region of a transistor, a metal-oxide capacitor is formed over the circuit element. An opening is formed through the capacitor and extends to the circuit element. An insulating spacer is formed, and a conductive member is formed that electrically connects the circuit element to the upper electrode layer of the metal-oxide capacitor. Devices including DRAM and NVRAM cells and methods of forming them are disclosed.