Method of etching film formed on semiconductor wafer
US5698070A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 30, 1993 |
| Grant date | Dec 16, 1997 |
| Priority date | — |
| Expiry date | Dec 30, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2001
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of etching oxide film on a semiconductor wafer comprising pushing the wafer against the top of lower electrode while facing it to an upper electrode, decompressing to exhaust a chamber, forming electric field between the wafer and the upper electrode under decompressed state and generating the gas plasma of process gas while supplying the process gas to an oxide-film-formed surface of the wafer through the upper electrode, introducing auxiliary gas to the peripheral portion of the wafer when the gas plasma of process gas is acting on the wafer, and controlling the etching reaction of the gas plasma relative to the peripheral portion of the wafer by auxiliary gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.