Multiple well device and process of manufacture
US5698458A · kind A · utility
42Cited by
21References
1Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 15, 1996 |
| Grant date | Dec 16, 1997 |
| Priority date | — |
| Expiry date | Jul 15, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0191
Abstract
A method of manufacture of a semiconductor device comprises forming a silicon dioxide film upon the surface of said device, forming patterns of silicon nitride upon the surface of said silicon dioxide film, ion implanting ions into said substrate adjacent to at least some of said silicon nitride patterns for well regions of a first polarity, forming a mask over said device, and deeply ion implanting with ions of opposite polarity into well regions of opposite polarity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.