Sun-Chieh Chien
74Patents
17h-index
36Co-inventors
80Inventor score
Filing activity: May 7, 1993 → Dec 2, 2011
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5413945A | Blanket N-LDD implantation for sub-micron MOS device manufacturing | Electricity | 96 | Expired |
| US5510279A | Method of fabricating an asymmetric lightly doped drain transistor device | Electricity | 56 | Expired |
| US5698458A | Multiple well device and process of manufacture | Electricity | 42 | Expired |
| US5484747A | Selective metal wiring and plug process | Emerging Cross-Sectional Technologies | 37 | Expired |
| US5888866A | Method for fabricating capacitors of a dynamic random access memory | Electricity | 32 | Expired |
| US5413953A | Method for planarizing an insulator on a semiconductor substrate using ion implantation | Electricity | 29 | Expired |
| US5946571A | Method of forming a capacitor | Electricity | 29 | Expired |
| US5328867A | Peroxide clean before buried contact polysilicon deposition | Emerging Cross-Sectional Technologies | 28 | Expired |
| US5734200A | Polycide bonding pad structure | Electricity | 27 | Expired |
| US6635565B2 | Method of cleaning a dual damascene structure | Electricity | 26 | Expired |
| US6248623A | Method for manufacturing embedded memory with different spacer widths | Electricity | 25 | Expired |
| US5981334A | Method of fabricating DRAM capacitor | Electricity | 25 | Expired |
| US6403417B1 | Method for in-situ fabrication of a landing via and a strip contact in an embedded memory | Electricity | 25 | Expired |
| US5874335A | Method of fabricating DRAM capacitors | Electricity | 24 | Expired |
| US5504038A | Method for selective tungsten sidewall and bottom contact formation | Electricity | 23 | Expired |
| US6008080A | Method of making a low power SRAM | Electricity | 21 | Expired |
| US5536683A | Method for interconnecting semiconductor devices | Electricity | 17 | Expired |
| US5554560A | Method for forming a planar field oxide (fox) on substrates for integrated circuit | Electricity | 17 | Expired |
| US6406968B1 | Method of forming dynamic random access memory | Electricity | 17 | Expired |
| US5661081A | Method of bonding an aluminum wire to an intergrated circuit bond pad | Electricity | 15 | Expired |
| US5432105A | Method for fabricating self-aligned polysilicon contacts on FET source/drain areas | Electricity | 15 | Expired |
| US6395596B1 | Method of fabricating a MOS transistor in an embedded memory | Electricity | 14 | Expired |
| US5521113A | Process for forming a butting contact through a gate electrode | Emerging Cross-Sectional Technologies | 14 | Expired |
| US6140201A | Method for fabricating a cylinder capacitor | Electricity | 14 | Expired |
| US6432768B1 | Method of fabricating memory device and logic device on the same chip | Electricity | 14 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.