Method for making an isolated sidewall capacitor having a compound plate electrode
US5701647A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 22, 1997 |
| Grant date | Dec 30, 1997 |
| Priority date | — |
| Expiry date | Jan 22, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/68
Abstract
A capacitor structure is provided, with a first conductor on top of a substrate having at least one layer of dielectric material thereon; a first non-conductor on top of and substantially in register with the first conductor, the first conductor and first non-conductor having a first opening formed therein; a second conductor, in electrical contact with the first conductor, formed on the sidewalls of the first opening; a non-conductive sidewall spacer formed in the first opening and contacting the second conductor, the non-conductive sidewall spacer having a second opening formed therein; and a third conductor formed in the second opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.