Double-poly monos flash EEPROM cell
US5703388A · kind A · utility
24Cited by
4References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 19, 1996 |
| Grant date | Dec 30, 1997 |
| Priority date | — |
| Expiry date | Jul 19, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention discloses a double poly metal oxide.backslash.nitride.backslash.oxide semiconductor electrically erasable programmable read only memory (EEPROM) for use in semiconductor memories. The EEPROM structure includes a select gate, an oxide.backslash.nitride.backslash.oxide layer, and a control gate. The control gate is formed on the oxide.backslash.nitride.backslash.oxide layer. A lightly doped drain (LDD) structure is formed adjacent to the drain and underneath the control gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.