Method for detecting information stored in a MRAM cell having two magnetic layers in different thicknesses
US5703805A · kind A · utility
19Cited by
6References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 8, 1996 |
| Grant date | Dec 30, 1997 |
| Priority date | — |
| Expiry date | May 8, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5616
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for detecting and storing four states contained in a MRAM cell having two layers (11,13) which have different thicknesses is provided. A first magnetic field is applied to the MRAM cell, which causes a magnetoresistive change in the MRAM cell. A first and second states are detected based on the magnetoresistive change. A second magnetic field is further applied to the MRAM cell. A third and fourth states are detected based on the magnetoresistive change due to the second magnetic field.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.