Mark Durlam
57Patents
21h-index
50Co-inventors
87Inventor score
Filing activity: Jun 6, 1994 → May 2, 2006
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6331943A | MTJ MRAM series-parallel architecture | Physics | 238 | Expired |
| US5966323A | Low switching field magnetoresistive tunneling junction for high density arrays | Physics | 186 | Expired |
| US5940319A | Magnetic random access memory and fabricating method thereof | Electricity | 154 | Expired |
| US6211090A | Method of fabricating flux concentrating layer for use with magnetoresistive random access memories | Performing Operations; Transporting | 153 | Expired |
| US6233172A | Magnetic element with dual magnetic states and fabrication method thereof | Electricity | 153 | Expired |
| US5861328A | Method of fabricating GMR devices | Electricity | 136 | Expired |
| US6835423B2 | Method of fabricating a magnetic element with insulating veils | Emerging Cross-Sectional Technologies | 134 | Expired |
| US6174737A | Magnetic random access memory and fabricating method thereof | Electricity | 125 | Expired |
| US5902690A | Stray magnetic shielding for a non-volatile MRAM | Emerging Cross-Sectional Technologies | 91 | Expired |
| US6153443A | Method of fabricating a magnetic random access memory | Electricity | 86 | Expired |
| US5659499A | Magnetic memory and method therefor | Physics | 80 | Expired |
| US6544801B1 | Method of fabricating thermally stable MTJ cell and apparatus | Electricity | 66 | Expired |
| US5699293A | Method of operating a random access memory device having a plurality of pairs of memory cells as the memory device | Physics | 53 | Expired |
| US6365419B1 | High density MRAM cell array | Electricity | 51 | Expired |
| US5804458A | Method of fabricating spaced apart submicron magnetic memory cells | Electricity | 51 | Expired |
| US5959880A | Low aspect ratio magnetoresistive tunneling junction | Physics | 39 | Expired |
| US5768183A | Multi-layer magnetic memory cells with improved switching characteristics | Physics | 38 | Expired |
| US6909631B2 | MRAM and methods for reading the MRAM | Physics | 30 | Expired |
| US7262069B2 | 3-D inductor and transformer devices in MRAM embedded integrated circuits | Electricity | 30 | Expired |
| US6518071B1 | Magnetoresistive random access memory device and method of fabrication thereof | Electricity | 25 | Expired |
| US6784510B1 | Magnetoresistive random access memory device structures | Performing Operations; Transporting | 24 | Expired |
| US5703805A | Method for detecting information stored in a MRAM cell having two magnetic layers in different thicknesses | Physics | 19 | Expired |
| US6760266B2 | Sense amplifier and method for performing a read operation in a MRAM | Physics | 17 | Expired |
| US6812040B2 | Method of fabricating a self-aligned via contact for a magnetic memory element | Electricity | 17 | Expired |
| US6911156B2 | Methods for fabricating MRAM device structures | Emerging Cross-Sectional Technologies | 17 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.