Etching method
US5705081A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 21, 1995 |
| Grant date | Jan 6, 1998 |
| Priority date | — |
| Expiry date | Sep 21, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3065
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An etching apparatus comprises a pair of electrodes provided to face each other in a processing vessel, a permanent magnet for forming a magnetic field substantially parallel to a surface of a to-be-processed object which is placed between the paired electrodes, a gas introduction section for introducing etching gas into the processing vessel, a high-frequency generator for applying high-frequency voltage to the paired electrodes for generating plasma, and a high-frequency control section for preventing plasma from being unevenly distributed by starting and stopping the application of high-frequency voltage by the high-frequency generator at fixed intervals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.