Method of manufacturing semiconductor device
US5707487A · kind A · utility
64Cited by
12References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 31, 1994 |
| Grant date | Jan 13, 1998 |
| Priority date | — |
| Expiry date | Oct 31, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/95
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to this invention, a method of manufacturing a semiconductor device includes the steps of forming a carbon film on a surface of a substrate, forming a mask pattern on the carbon film, etching the carbon film along the mask pattern to form a carbon film pattern, and reactive ion etching the substrate along the carbon film pattern using a high density plasma produced by application of a high frequency and a magnetic field, application of a microwave, irradiation of an electron beam, application of a high frequency of not less than 27 MHz, or application of a inductive coupled high frequency.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.