Scanning spreading resistance probe
US5710052A · kind A · utility
11Cited by
4References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 17, 1995 |
| Grant date | Jan 20, 1998 |
| Priority date | — |
| Expiry date | Oct 17, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/854
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An accurate method of measuring the two-dimensional doping profile of a semiconductor by measuring an electrical parameter along a path of a dopant iso-concentration. Thin vertical or horizontal slices of the semiconductor integrated circuit are provided and are probed to allow the electrical parameter to be measured through a single concentration area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.