Silicon oxime film
US5710067A · kind A · utility
116Cited by
12References
101Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 7, 1995 |
| Grant date | Jan 20, 1998 |
| Priority date | — |
| Expiry date | Jun 7, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon oxime film is formed by plasma enhanced chemical vapor deposition. The silicon oxime film is useful as an anti-reflection layer during photolithography, as an etch stop, and as a protection layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.