Film forming apparatus and film forming method
US5711815A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 27, 1996 |
| Grant date | Jan 27, 1998 |
| Priority date | — |
| Expiry date | Jun 27, 2016 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45521
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A film forming apparatus includes: a chamber for housing a semiconductor wafer having a surface on which a film is to be formed, and performing a film formation process with respect to the semiconductor wafer; a process gas supply system for supplying a process gas for forming the film onto the surface of the semiconductor wafer on which the film is to be formed; a heater for heating the semiconductor wafer to decompose a film forming gas, thereby forming the film on the wafer; a purge gas supply system for supplying a purge gas from a lower surface side of the surface of the semiconductor wafer on which the film is to be formed toward a peripheral edge portion of the semiconductor wafer; and a ring member positioned at a position to cover a peripheral edge portion of the surface on which the film is to be formed when film formation is to be performed with respect to the semiconductor wafer, the ring member having an outer edge projecting from an outer edge of the target object in the film formation. A flow path in which substantially all the purge gas flows outward from the target object is formed by the ring member.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.