Etching agent, electronic device and method of manufacturing the device
US5714407A · kind A · utility
28Cited by
3References
18Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Mar 31, 1995 |
| Grant date | Feb 3, 1998 |
| Priority date | — |
| Expiry date | Mar 31, 2015 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC09K13/08
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
An etching agent and an electronic device manufacturing method using the etching agent. The etching agent contains, in a solution, hydrofluoric acid at a concentration of 0.05 to 0.5 mol/l, and halooxoacid ions, represented by the formula (XO.sub.n).sup.p- (wherein X is a halogen element, n is 3, 4 or 6, p is 1, 2 or 3), at a concentration of at least 0.01 mol/l. An electronic device manufactured using the etching agent requires only a single etching step to etch both conductive layers (such as aluminum) as well as ohmic contact layers (a-Si).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.