Contaminant reduction improvements for plasma etch chambers
US5716484A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 11, 1995 |
| Grant date | Feb 10, 1998 |
| Priority date | — |
| Expiry date | May 11, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S156/917
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma etch chamber includes a modified focus ring which is used in conjunction with chamber pressure throttling to eject contaminants in the focus ring away from the substrate just before the etching cycle is completed. Additionally, process gas is directed against the inner wall of the chamber to create a swirling flow of plasma within the chamber and thus disturb any contaminant-generating field adjacent the chamber wall. A process gas, or a non-reactive purge gas, may also be supplied from a diffuser atop the cathode, to direct a gas layer along the top and sides of the chamber to reduce contaminant build-up on the chamber surfaces.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.