Field programmable gate array having reproducible metal-to-metal amorphous silicon antifuses
US5717230A · kind A · utility
10Cited by
48References
11Claims
0Family size
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Key dates
| Filing date | Oct 13, 1994 |
| Grant date | Feb 10, 1998 |
| Priority date | — |
| Expiry date | Oct 13, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A field programmable gate array has a programmable interconnect structure comprising metal signal conductors and metal-to-metal PECVD amorphous silicon antifuses. The metal-to-metal PECVD amorphous silicon antifuses have an unprogrammed resistance of at least 550 megaohms and a programmed resistance of under 200 ohms.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.