Substrate with controlled amount of noble gas ions to reduce channeling and/or diffusion of a boron dopant forming P-LDD region of a PMOS device
US5717238A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 9, 1996 |
| Grant date | Feb 10, 1998 |
| Priority date | — |
| Expiry date | Jul 9, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0227
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process and resulting product are described for controlling the channeling and/or diffusion of a boron dopant in a P- region forming the lightly doped drain (LDD) region of a PMOS device in a single crystal semiconductor substrate, such as a silicon substrate. The channeling and/or diffusion of the boron dopant is controlled by implanting the region, prior to implantation with a boron dopant, with noble gas ions, such as argon ions, at a dosage at least equal to the subsequent dosage of the implanted boron dopant, but not exceeding an amount equivalent to the implantation of about 3.times.10.sup.14 argon ions/cm.sup.2 into a silicon substrate, whereby channeling and diffusion of the subsequently implanted boron dopant is inhibited without, however, amorphizing the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.