Shallow trench isolation technique
US5719085A · kind A · utility
397Cited by
7References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 29, 1995 |
| Grant date | Feb 17, 1998 |
| Priority date | — |
| Expiry date | Sep 29, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/05
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a trench isolation region. The method of the present invention comprises the steps of forming an opening in a semiconductor substrate, oxidizing the opening a first time, and then etching the oxidized opening with a wet etchant comprising HF. The opening is then oxidized a second time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.