Method of manufacturing SiC semiconductor device having double oxide film formation to reduce film defects
US5723376A · kind A · utility
24Cited by
13References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 7, 1996 |
| Grant date | Mar 3, 1998 |
| Priority date | — |
| Expiry date | Nov 7, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A groove is formed on the surface of a semiconductor substrate composed of silicon carbide and a first thermal oxidation film is formed by executing thermal oxidation on a damaged layer of groove inner walls. Then, the first thermal oxidation film is removed so that the damaged layer can be removed. Since a second thermal oxidation film is formed after the damaged layer is removed, the second thermal oxidation film is uniform. A silicon carbide semiconductor device can be achieved with less side etching because substantially a (0001) carbon face of a cubic system is chosen as the plane orientation of the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.