Patent · US Expired

Apparatus for analyzing thin film property

US5723982A · kind A · utility

6Cited by
5References
4Claims
0Family size

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Key dates

Filing dateJul 25, 1995
Grant dateMar 3, 1998
Priority date
Expiry dateJul 25, 2015

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S977/854
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A method and apparatus for measuring electrical characteristics of a thin surface layer of a sample such as a semiconductor element. A triangular pulse wave of is applied between the sample and a probe needle on a cantilever. By measuring current that flows through the thin surface layer of the sample using the probe needle, I/V characteristics are obtained. A control circuit keep constant the clearance between the probe needle and the thin surface layer of the sample by applying a voltage to a piezoelectric element that supports the sample. I/V characteristics are then measured at a plurality of test points on the thin surface layer of the sample.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.