Method for making thin film transistors
US5728604A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 13, 1996 |
| Grant date | Mar 17, 1998 |
| Priority date | — |
| Expiry date | Sep 13, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/964
Abstract
A method for making semiconductor thin film transistors (TFTs) having a bottom gate such that the gate electrode is formed in a furrow of an insulating layer, with a gate oxide and body polysilicon formed thereon, thereby allowing the source and drain level to be in a smooth plane parallel with the gate level. Steps that may be included in the disclosed method for fabricating thin film transistors having a bottom gate are: a) forming an insulating layer on a substrate, and forming a furrow by etching the insulating layer at a portion corresponding to where a gate line is to be formed; b) forming a gate line in the furrow by depositing a conductive layer, and etching back the conductive layer; c) forming a gate insulator on the gate line, forming a semiconductor layer on the gate insulator; and d) forming impurity regions at opposite sides of the gate line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.