Method for producing a thin film transistor having improved carrier mobility characteristics and leakage current characteristics
US5728610A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 28, 1996 |
| Grant date | Mar 17, 1998 |
| Priority date | — |
| Expiry date | Jun 28, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6745
Abstract
A polycrystalline silicon film formed of an active layer of a thin film transistor is entirely hydrogenated by a low-temperature process, thereby lowering the resistance and relaxing the electric field in the vicinity of the drain to reduce the leakage current. A gate and an insulating film that covers it are formed on a substrate having an insulating surface. A hydrogenated polycrystalline silicon film is formed over the substrate, including the gate, with the insulating film interposed therebetween. A silicon oxide film pattern is formed on the polycrystalline silicon film directly above the gate. Source/drain regions are formed on the polycrystalline silicon film substantially at two external sides of the silicon oxide film pattern. The source/drain regions are formed from a hydrogen-containing amorphous silicon film, a conductive silicon film and a metal film, which are successively stacked on the polycrystalline silicon film. Accordingly, the hydrogen-containing amorphous silicon film functions as an offset region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.