Semiconductor device
US5729030A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 24, 1996 |
| Grant date | Mar 17, 1998 |
| Priority date | — |
| Expiry date | May 24, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3432
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor device includes an InP substrate; a channel layer in which electrons, as charge carriers, travel; and an Al.sub.x1 Ga.sub.1-x1 As.sub.y1 P.sub.z1 Sb.sub.1-y1-z1 (0.ltoreq.x1.ltoreq.1, 0.ltoreq.y1<1, 0<z1.ltoreq.1) electron supply layer for supplying electrons to the channel layer. The electron supply layer has an electron affinity smaller than that of the channel layer and is doped with a dopant impurity producing n type conductivity. Since n type AlGaAsPSb is thermally stable, its electrical characteristics are not changed by heat treatment at about 350.degree. C., resulting in a thermally stable and highly reliable HEMT in which the characteristics hardly change with the passage of time during fabrication and operation. Further, a heterostructure including an electron supply layer and a channel layer and having a desired energy band structure is easily produced with a wide degree of freedom in designing the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.