Termination circuits for reduced swing signal lines and methods for operating same
US5729152A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 27, 1995 |
| Grant date | Mar 17, 1998 |
| Priority date | — |
| Expiry date | Oct 27, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02D10/00
- WIPO fieldDigital communication
- WIPO sectorElectrical engineering
Abstract
A memory device which utilizes a plurality of memory modules coupled in parallel to a master I/O module through a single directional asymmetrical signal swing (DASS) bus. This structure provides an I/O scheme having symmetrical swing around half the supply voltage, high through-put, high data bandwidth, short access time, low latency and high noise immunity. The memory device utilizes improved column access circuitry including an improved address sequencing circuit and a data amplifier within each memory module. The memory device includes a resynchronization circuit which allows the device to operate either synchronously and asynchronously using the same pins. Each memory module has independent address and command decoders to enable independent operation. Thus, each memory module is activated by commands on the DASS bus only when a memory access operation is performed within the particular memory module. The memory device includes redundant memory modules to replace defective memory modules. Replacement can be carried out through commands on the DASS bus. The memory device can be configured to simultaneously write a single input data stream to multiple memory modules or to perform …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.