Light-emitting semiconductor device using gallium nitride group compound

US5733796A · kind A · utility

Assignees

• TOYODA GOSEI CO., LTD. · JP
• KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO · JP
• NAGOYA UNIVERSITY · JP
• Research Development Corporation of Japan · JP

Inventors

• Katsuhide Manabe · Ichinomiya, JP
• Akira Mabuchi · Nagoya, JP
• Hisaki Kato · Hamamatsu, JP
• Michinari Sassa · Miyoshi, JP
• Norikatsu Koide · Nara, JP
• Shiro Yamazaki · Fukushima, JP
• Masafumi Hashimoto · Tokyo, JP
• Isamu Akasaki · Nagoya, JP

Key dates

• Filing date: Nov 9, 1995
• Grant date: Mar 31, 1998
• Expiry date: Nov 9, 2015

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/8215

Abstract

A light-emitting semiconductor device using a gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N) having an i.sub.L -layer of insulating gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N, inclusive of x=0) containing a low concentration of p-type impurities. An i.sub.H -layer of insulating gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N, inclusive of x=0) containing a high concentration of p-type impurities is adjacent to the i.sub.L -layer. An n-layer of n-type gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N, inclusive of x=0) of low carrier concentration is adjacent to the i.sub.L -layer. An n.sup.+ -layer of n-type gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N, inclusive of x=0) of high carrier concentration doped with n-type impurities is adjacent to the n-layer.