Polycide bonding pad structure
US5734200A · kind A · utility
27Cited by
16References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 28, 1997 |
| Grant date | Mar 31, 1998 |
| Priority date | — |
| Expiry date | Jan 28, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/351
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A bonding pad adapted for use with an Aluminum wire that resists stresses that would otherwise peel the pad from the substrate. The pad has a polysilicon layer adhered to an insulating layer on a semiconductor substrate, a overlying refractory metal polycide layer, a second polysilicon layer, a refractory metal layer, and a thick Aluminum alloy bonding pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.