Method for depositing a platinum layer on a silicon wafer
US5736422A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 22, 1995 |
| Grant date | Apr 7, 1998 |
| Priority date | — |
| Expiry date | Nov 22, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32051
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to a method of depositing a platinum thin-film on a silicon wafer. The method includes the steps of depositing a platinum layer on an insulating oxide layer under an oxidation atmosphere to form a mixture film consisted of platinum grains, platinum oxide grains and oxygen adhered to those grains (hereinafter, "the mixture film" to be referred as "oxygen containing platinum thin-film"); depositing an additional platinum thin-film to a desired thickness on the oxygen containing platinum thin-film under a complete inert atmosphere; and annealing the silicon substrate at a temperature of 400.degree. to 1,300.degree. C. in order to remove oxygen present in the independent form or in platinum oxide form within the oxygen containing platinum thin-film and to stablize the entire platinum thin-film. The oxygen containing platinum thin-film layer serves as a glue layer during the depositing step of additional platinum thin-film layer and is converted into pure platinum condition after the annealing step, whereby the silicon substrate substantially does not have any glue layer between the platinum layer and the insulating layer of the silicon substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.