Semiconductor device with conductive connecting layer and abutting insulator section made of oxide of same material
US5736770A · kind A · utility
9Cited by
12References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 24, 1994 |
| Grant date | Apr 7, 1998 |
| Priority date | — |
| Expiry date | May 24, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device comprising: a semiconductor substrate; a diffused region extending from the surface and to the inside of the semiconductor substrate; a first insulating layer formed on the semiconductor substrate and having a contact hole located through which the diffused region is exposed; a first conductor layer formed on a portion of the first insulating layer and connected so the diffused region through the first contact hole; and an insulator section made of an oxide of the substance of the first conductor layer and formed on another portion of the first insulating layer to surround the first conductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.