Semiconductor processing method of making electrical contact to a node received within a mass of insulating dielectric material
US5739068A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 2, 1996 |
| Grant date | Apr 14, 1998 |
| Priority date | — |
| Expiry date | Feb 2, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor processing method of making electrical contact to a node received within a mass of insulating dielectric material includes, a) providing a node within a mass of insulating dielectric material; b) first stage etching into the insulating dielectric material over the node in a manner substantially selective relative to the node; c) after the first stage etching, second stage etching the dielectric material in a manner which increases a degree of sidewall polymerization over that occurring in the first stage etching and in a manner substantially selective relative to the node; and d) after the second stage etching, third stage etching the dielectric material with a degree of sidewall polymerization which is less than that of the second stage etching and in a manner substantially selective relative to the first node. An alternate method provides an etch stop annulus cap overlying an electrically conductive ring which projects from a primary insulating layer. A secondary insulating layer is then provided outwardly of the etch stop annulus cap. A second contact opening is patterned and etched through the second insulating layer relative to the first contact opening and to …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.