Double heterojunction light emitting diode with gallium nitride active layer
US5739554A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 8, 1995 |
| Grant date | Apr 14, 1998 |
| Priority date | — |
| Expiry date | May 8, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/824
Abstract
A double heterostructure for a light emitting diode comprises a layer of aluminum gallium nitride having a first conductivity type; a layer of aluminum gallium nitride having the opposite conductivity type; and an active layer of gallium nitride between the aluminum gallium nitride layers, in which the gallium nitride layer is co-doped with both a Group II acceptor and a Group IV donor, with one of the dopants being present in an amount sufficient to give the gallium nitride layer a net conductivity type, so that the active layer forms a p-n junction with the adjacent layer of aluminum gallium nitride having the opposite conductivity type.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.