Semiconductor structures which incorporate thin film transistors
US5744384A · kind A · utility
13Cited by
6References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 19, 1996 |
| Grant date | Apr 28, 1998 |
| Priority date | — |
| Expiry date | Sep 19, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/903
Abstract
Improved field effect transistor (FET) structures are described. They include a thin film transistor (TFT), wherein a contact layer directly connects a diffusion region of the TFT to an active site of another device, e.g., another transistor. This invention is especially suitable for TFT's which are built on one or more conductive studs. Static random access memory (SRAM) cells incorporating one or more of the TFT's are also described. Moreover, this invention is directed to methods for preventing or alleviating the problems associated with gouging during formation of contact layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.