Silicon carbide semiconductor device and process for its production
US5744826A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 22, 1997 |
| Grant date | Apr 28, 1998 |
| Priority date | — |
| Expiry date | Jan 22, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
Abstract
A semiconductor substrate 4 consisting of an n.sup.+ -type substrate 1, an n.sup.- -type silicon carbide semiconductor layer 2 and a p-type silicon carbide semiconductor layer 3, made of hexagonal crystal-based single crystal silicon carbide with the main surface having a planar orientation approximately in the (0001) carbon face. An n.sup.+ -type source region 5 is formed in the surface layer of the semiconductor layer 3, and a trench 7 runs from the main surface through the region 5 and the semiconductor layer 3 reaching to the semiconductor layer 2, and extending approximately in the 1120! direction. An n-type silicon carbide semiconductor thin-film layer 8 is provided on the region 5, the semiconductor layer 3 and the semiconductor layer 2 on the side walls of the trench 7, while a gate electrode layer 10 is formed on the inner side of a gate insulating film 9, a source electrode layer 12 is formed on the surface of the semiconductor region 5, and a drain electrode layer 13 is formed on the surface of the n.sup.+ -type substrate 1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.