Capacitor for semiconductor integrated circuit
US5745336A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 6, 1995 |
| Grant date | Apr 28, 1998 |
| Priority date | — |
| Expiry date | Apr 6, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A semiconductor integrated circuit apparatus according to the present invention has a capacitor formed in such a manner that a ferroelectric thin film is formed after a MOS transistor has been formed on a substrate thereof, a ferroelectric thin film made of, for example, PbZrTiO.sub.3 or SrTiO.sub.3 or the like is formed into a columnar shape to form electrodes positioned in direct contact with the side wall portions of said columnar ferroelectric thin film and the top portion is removed. As a result, a fact that an oxide of each electrode, which deteriorates the relative permittivity, is formed on the interface between the electrode and the ferroelectric material is prevented, and a large capacity can be realized with respect to the area of the substrate because the ferroelectric thin film is formed into the columnar and elongated shape, resulting in that the capacitance of the capacitor is not reduced in which the electrodes and the oxide dielectric material having a high permittivity are, in series, connected to each other. The capacitor is formed into a DRAM or an FRAM memory cell so as to realize a semiconductor memory revealing a high degree of integration and a high processi…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.