Process for forming shallow trench isolation
US5747377A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 6, 1996 |
| Grant date | May 5, 1998 |
| Priority date | — |
| Expiry date | Sep 6, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/947
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for forming a shallow trench isolation is disclosed. Initially, a gate oxide layer is formed on a substrate, and a silicon nitride, which defines an active area, is then patterned on the gate oxide layer. Next, hemispherical grain silicon is formed on the silicon nitride, the sidewalls of the silicon nitride, and the exposed gate oxide layer. Portions of the gate oxide layer are removed to form oxide islands using the silicon nitride and the hemispherical grain silicon as mask. Thereafter, portions of the substrate are removed using the oxide islands as mask. Finally, the exposed substrate is thermally oxidized to form the field oxide structure of the present invention.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.