Method of damage free doping for forming a dram memory cell
US5747378A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 27, 1997 |
| Grant date | May 5, 1998 |
| Priority date | — |
| Expiry date | May 27, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/144
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of damage-free doping for forming a dynamic random access memory cell is disclosed herein. A phosphoric silicate glass is deposited as a diffusion source. The phosphorous ions of phosphoric silicate glass can be diffused into a substrate to form the source/drain regions by a high temperature during a thermal annealing process. Next, a thermal oxide layer is formed on the gate electrode and the surface of the substrate by the thermal oxidation process. The thermal oxide layer can prevent ions from diffusing into the substrate during the subsequent thermal treatment process. Therefore, the present invention can reduce the damage of a dynamic random access memory.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.