Ion implantation apparatus with improved post mass selection deceleration
US5747936A · kind A · utility
15Cited by
5References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 25, 1996 |
| Grant date | May 5, 1998 |
| Priority date | — |
| Expiry date | Nov 25, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/04756
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A controlled deceleration potential is provided in an ion implanter between the target and the flight tube through the mass selector, by means of a variable resistance comprising a series of HEXFETs. The series of HEXFETs conduct current absorbed by the substrate back to the flight tube so that a desired decelertion potential can be formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.