Semiconductor single crystalline substrate and method for production thereof
US5751055A · kind A · utility
22Cited by
5References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 8, 1995 |
| Grant date | May 12, 1998 |
| Priority date | — |
| Expiry date | Feb 8, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/219
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a semiconductor single crystalline substrate provided with a protecting film to prevent autodoping on the reverse surface thereof, for growing a vapor-phase epitaxial layer on the main obverse surface thereof, a width of a chamfer is set for locating an edge-crown occurred in consequence of a vapor-phase epitaxial growth on the chamfer, and a gap of a distance is formed between a periphery of the protecting film and an innermost part of the chamfer on the reverse surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.