Tamotsu Maruyama
13Patents
4h-index
20Co-inventors
56Inventor score
Filing activity: Feb 8, 1995 → Jul 20, 2006
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7771893B2 | Photomask blank, photomask and fabrication method thereof | Emerging Cross-Sectional Technologies | 27 | Active |
| US5751055A | Semiconductor single crystalline substrate and method for production thereof | Emerging Cross-Sectional Technologies | 22 | Expired |
| US6511778B2 | Phase shift mask blank, phase shift mask and method of manufacture | Physics | 7 | Expired |
| US5882401A | Method for manufacturing silicon single crystal substrate for use of epitaxial layer growth | Electricity | 7 | Expired |
| US5989985A | Semiconductor single crystalline substrate and method for production thereof | Emerging Cross-Sectional Technologies | 4 | Expired |
| US6641958B2 | Phase shift mask blank, phase shift mask, and methods of manufacture | Physics | 4 | Expired |
| US6503669B2 | Photomask blank, photomask and method of manufacture | Chemistry; Metallurgy | 4 | Expired |
| US6514642B2 | Phase shift mask and method of manufacture | Emerging Cross-Sectional Technologies | 3 | Expired |
| US6503668B2 | Phase shift mask blank, phase shift mask, and method of manufacture | Physics | 2 | Expired |
| US7622227B2 | Phase-shift photomask-blank, phase-shift photomask and fabrication method thereof | Emerging Cross-Sectional Technologies | 2 | Active |
| US6733930B2 | Photomask blank, photomask and method of manufacture | Physics | 0 | Expired |
| US6727027B2 | Photomask blank and photomask | Physics | 0 | Expired |
| US6352801B1 | Phase shift mask and making process | Physics | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.