Automatic programming algorithm for page mode flash memory with variable programming pulse height and pulse width
US5751637A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 12, 1996 |
| Grant date | May 12, 1998 |
| Priority date | — |
| Expiry date | Mar 12, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for programming a flash memory array which insures fast programming to substantially all of the cells in the array, without over-programming, based on providing a pattern of program retry pulses which have respective pulse widths and pulse heights which vary according to a pattern. The pattern includes a combination of both increasing pulse widths and increasing pulse heights. The pattern includes a first phase which completes in a specified amount of time including a predetermined number of retries so that substantially all of the cells in the array are programmed within the first phase. A second phase of the patter involves a sequence of higher energy pulses addressed to programming the slowest cells in the array. When used in a page program array, in which individual cells which are programmed fast do not receive subsequent retry pulses, a very fast and reliable programming scheme is achieved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.