Process for the elimination of tungsten oxidation with inert gas stabilization in chemical vapor deposition processes
US5753303A · kind A · utility
4Cited by
11References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 30, 1996 |
| Grant date | May 19, 1998 |
| Priority date | — |
| Expiry date | Apr 30, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28556
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An inert gas, such as helium, nitrogen, or argon, is used for pressurization and stabilization in a chemical vapor deposition process that occurs in an ambient temperature in excess of 400.degree. C. Using the inert gas in the pressurization and stabilization stages of the chemical vapor deposition process eliminates the formation of tungsten oxides on tungsten studs, lines and other devices in the substrate, thereby eliminating the variable contact resistance and other problems associated with tungsten oxides.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.