Process for evenly depositing ions using a tilting and rotating platform
US5759282A · kind A · utility
6Cited by
4References
2Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 4, 1997 |
| Grant date | Jun 2, 1998 |
| Priority date | — |
| Expiry date | Feb 4, 2017 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4584
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for depositing a layer of uniform thickness on an uneven surface of a substrate is disclosed. The layer could be deposited by plasma or chemical vapor deposition (CVD). The uneven surface of the substrate has horizontal surfaces and vertical sidewalls and is located on a movable platform. The platform is tilted and rotated as the layer is deposited so that the ions or the flow of chemical vapor reaches the horizontal surface and the sidewall at a similar incident angle. Thereby, the layer is evenly deposited and has a uniform thickness with proper coverage and planarization.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.