Heat treatment jig for semiconductor wafers and a method for treating a surface of the same
US5759426A · kind A · utility
3Cited by
2References
2Claims
0Family size
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Key dates
| Filing date | Nov 16, 1995 |
| Grant date | Jun 2, 1998 |
| Priority date | — |
| Expiry date | Nov 16, 2015 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B35/00
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A silicon nitride layer 12b is thermally grown on the topmost surface of the heat treatment jig 12 composed of silicon or silicon carbide in a nitrogen ambience. The silicon nitride layer 12b is thermally grown in a nitrogen ambience in the temperature range of 1,100.degree. C.-1,300.degree. C. It is desirable to remove slightly the surface of the jig by, for example, hydrogen etching before thermally growing the silicon nitride layer 12b. After the etching, a silicon oxide layer can be thermally grown on the jig surface in an oxygen ambience before thermally growing the silicon nitride layer 12b.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.