Method and apparatus for fabricating silicon dioxide and silicon glass layers in integrated circuits
US5759923A · kind A · utility
75Cited by
1References
18Claims
0Family size
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Inventors
Key dates
| Filing date | Mar 14, 1996 |
| Grant date | Jun 2, 1998 |
| Priority date | — |
| Expiry date | Mar 14, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A precursor liquid comprising silicon in a xylenes solvent is prepared, a substrate is placed within a vacuum deposition chamber, the precursor liquid is misted, and the mist is flowed into the deposition chamber while maintaining the chamber at ambient temperature to deposit a layer of the precursor liquid on the substrate. The liquid is dried, baked, and annealed to form a thin film of silicon dioxide or silicon glass on the substrate. Then an integrated circuit is completed to include at least a portion of the silicon dioxide or silicon glass layer as an insulator for an electronic device in the integrated circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.