Bipolar transistor circuit element having base ballasting resistor
US5760457A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 26, 1997 |
| Grant date | Jun 2, 1998 |
| Priority date | — |
| Expiry date | Feb 26, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/615
Abstract
A bipolar transistor circuit element includes a semiconductor substrate; successively disposed on the substrate, a base layer, an emitter layer, and a collector layer; a bipolar transistor formed from parts of the collector, base, and emitter layers and including a base electrode electrically connected to the base layer and a base electrode pad for making an external connection to the base layer; a base ballasting resistor formed from a part of the base layer isolated from the bipolar transistor and electrically connecting the base electrode to the base electrode pad; and a base parallel capacitor connected in parallel with the base ballasting resistor wherein the base parallel capacitor includes part of the base input pad, a dielectric film disposed on part of the base electrode pad, and a second electrode disposed on the dielectric layer opposite the base electrode pad and electrically connected to the emitter electrode of the bipolar transistor. The base ballasting resistor has a high resistance relative to an emitter ballasting reactor so that it can be easily mass produced with good uniformity and yield.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.